Electronic Devices

Question

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R

Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.

Reason R: Diffusion current in a p-n junction is from the …-side to the p-side if the junction is forward biased.

In the light of the above statements, choose the most appropriate answer from the options given below

Accepted Answer

Option B. A p-n junction consists of a p-type semiconductor (which has an excess of holes) in contact with an n-type semiconductor (which has an excess of electrons). In a forward-biased p-n junction, an external voltage is applied such that the positive terminal is connected to the p-side and the negative terminal is connected to the n-side. This configuration promotes the flow of majority charge carriers (holes from the p-side and electrons from the n-side) across the junction.

More on Electronic Devices

Electronic Devices

More on Electronic Devices